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Freescale Semiconductor Technical Data
Document Number: MRF1570N Rev. 9, 6/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 11.5 dB Efficiency -- 60% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1570NT1 MRF1570FNT1
470 MHz, 70 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1366 - 05, STYLE 1 TO - 272 - 8 WRAP PLASTIC MRF1570NT1
CASE 1366A - 03, STYLE 1 TO - 272 - 8 PLASTIC MRF1570FNT1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +0.5, +40 20 165 0.5 - 65 to +150 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.29 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF1570NT1 MRF1570FNT1 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz f = 470 MHz Gps -- -- 11.5 60 -- -- dB % Ciss Coss Crss -- -- -- -- -- -- 500 250 35 pF pF pF VGS(th) VDS(on) 1 -- -- -- 3 1 Vdc Vdc IDSS -- -- 1 A Symbol Min Typ Max Unit
MRF1570NT1 MRF1570FNT1 2 RF Device Data Freescale Semiconductor
B1 VGG C14 C13 C12 + C11 R1 Z2 RF INPUT C1 Z1 C2 C3 R4 Z3 L2 C5 Z5 L4 C7 B2 VGG C19 C18 C17 + C16 C15 C44 C43 Z7 C9 R2 L10 Z9 Z11 Z13 Z15 L1 C4 Z4 L3 C6 C8 DUT C21 C23 Z6 R3 Z8 Z10 Z12 C20 C10 C38 C37
B3 B4 C36 C35 C34 + VDD C33
L9 Z14 C22
Z16 C24
L5 C26
L7 C28
Z18 C30 RF OUTPUT C32 Z21
Z20 Z22 C25 C27
Z17
L6
L8 C29
Z19 C31
B5 B6 C42 C41 C40 + VDD C39
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C32, C37, C43 270 pF, 100 mil Chip Capacitors C2, C20, C21 33 pF, 100 mil Chip Capacitors C3 18 pF, 100 mil Chip Capacitor C4, C5 30 pF, 100 mil Chip Capacitors C6, C7 180 pF, 100 mil Chip Capacitors C8, C9 150 pF, 100 mil Chip Capacitors C10, C15 300 pF, 100 mil Chip Capacitors C11, C16, C33, C39 10 F, 50 V Electrolytic Capacitors C12, C17, C34, C40 0.1 F, 100 mil Chip Capacitors C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors C22, C23 110 pF, 100 mil Chip Capacitors C24, C25 68 pF, 100 mil Chip Capacitors C26, C27 120 pF, 100 mil Chip Capacitors C28, C29 24 pF, 100 mil Chip Capacitors C30, C31 27 pF, 100 mil Chip Capacitors C38, C44 240 pF, 100 mil Chip Capacitors L1, L2 17.5 nH, 6 Turn Inductors, Coilcraft
L3, L4 L5, L6, L7, L8 L9, L10 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9, Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Board
5 nH, 2 Turn Inductors, Coilcraft 1 Turn, #18 AWG, 0.33 ID Inductors 3 Turn, #16 AWG, 0.165 ID Inductors Type N Flange Mounts 25.5 Chip Resistors (1206) 9.3 Chip Resistors (1206) 0.32 x 0.080 Microstrip 0.46 x 0.080 Microstrip 0.34 x 0.080 Microstrip 0.45 x 0.080 Microstrip 0.28 x 0.240 Microstrip 0.39 x 0.080 Microstrip 0.27 x 0.080 Microstrip 0.25 x 0.080 Microstrip 0.29 x 0.080 Microstrip 0.14 x 0.080 Microstrip 0.32 x 0.080 Microstrip 31 mil Glass Teflon(R)
Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 3
VGG C11 GND B1 C38 C12 C13 C14 C4 C1 C2 L1 L3 C6 C10 R1 C8 R3 R4 C9 R2 C15 C44 C43 B2 C16 MRF1570T1 B5 B6 C39 L9 C22 C23 L10 C26 C27 L6 C21 C25 L8 C29 C42 C41 C40 C37 C20 C24 L5 B3 B4 C33
VDD
GND
C28 C36 C35 C34 L7 C30 C31 C32
C3 C5 C17 C18 C19 L2 C7
L4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 135 - 175 MHz
100 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 0
80 135 MHz 60 175 MHz 40 150 MHz 20 VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 Pin, INPUT POWER (WATTS)
-5 135 MHz -10 175 MHz 155 MHz -15 VDD = 12.5 Vdc -20 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
Figure 4. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS, 135 - 175 MHz
18 VDD = 12.5 Vdc 17 G ps , POWER GAIN (dB) 16 15 14 13 12 10 155 MHz 175 MHz 135 MHz , DRAIN EFFICIENCY (%) 60 70 155 MHz 175 MHz 135 MHz
50
40
30 VDD = 12.5 Vdc 20 10
20
30
40
50
60
70
80
90
20
30
40
50
60
70
80
90
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 5. Gain versus Output Power
Figure 6. Drain Efficiency versus Output Power
90
100
Pout , OUTPUT POWER (WATTS)
80
135 MHz 155 MHz 175 MHz
, DRAIN EFFICIENCY (%)
80
155 MHz 175 MHz 135 MHz
60 40
70
60 VDD = 12.5 Vdc Pin = 36 dBm 50 400 600 800 1000 1200 1400 1600
20 0 400
VDD = 12.5 Vdc Pin = 36 dBm 600 800 1000 1200 1400 1600
IDQ, BIASING CURRENT (mA)
IDQ, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
Figure 8. Drain Efficiency versus Biasing Current
100 Pout , OUTPUT POWER (WATTS)
100
135 MHz 60 175 MHz 155 MHz
, DRAIN EFFICIENCY (%)
80
80
155 MHz 175 MHz
60
135 MHz
40
40
20 0 10
Pin = 36 dBm IDQ = 800 mA 11 12 13 14 15
20 0 10 11 12 13
Pin = 36 dBm IDQ = 800 mA 14 15
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
Figure 10. Drain Efficiency versus Supply Voltage
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 5
B1 VGG C14 C13 C12 + C11 R1 Z3 RF INPUT C1 Z1 C2 Z2 C3 C4 R4 Z4 C6 R2 B2 VGG C20 C19 C18 + C17 C16 C15 C42 Z6 Z8 C8 L6 Z10 Z12 R3 Z5 Z7 C7 C5 DUT Z9 C21 C10 C9 C37 L5 Z11
B3 B4 C36 C35 C34 + VDD C33
Z13 C23
Z15 C25
L1
L3 C27
Z17 C29 RF OUTPUT C32
Z19 C22 C24 Z14 Z16 C26 B5 B6 C41 C40 C39 + VDD C38 L2 L4 C28 C31 Z18
C30
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C9, C15, C32 270 pF, 100 mil Chip Capacitors C2, C3 7.5 pF, 100 mil Chip Capacitors C4 5.1 pF, 100 mil Chip Capacitor C5, C6 180 pF, 100 mil Chip Capacitors C7, C8 47 pF, 100 mil Chip Capacitors C10, C16, C37, C42 120 pF, 100 mil Chip Capacitors C11, C17, C33, C38 10 F, 50 V Electrolytic Capacitors C12, C18, C34, C39 470 pF, 100 mil Chip Capacitors C13, C19, C35, C40 1200 pF, 100 mil Chip Capacitors C14, C20, C36, C41 0.1 F, 100 mil Chip Capacitors C21, C22 33 pF, 100 mil Chip Capacitors C23, C24 27 pF, 100 mil Chip Capacitors C25, C26 15 pF, 100 mil Chip Capacitors C27, C28 2.2 pF, 100 mil Chip Capacitors C29, C30 6.2 pF, 100 mil Chip Capacitors C31 1.0 pF, 100 mil Chip Capacitor
L1, L2, L3, L4 L5, L6 N1, N2 R1, R2 R3, R4 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19 Board
1 Turn, #18 AWG, 0.085 ID Inductors 2 Turn, #16 AWG, 0.165 ID Inductors Type N Flange Mounts 25.5 Chip Resistors (1206) 10 Chip Resistors (1206) 0.240 x 0.080 Microstrip 0.185 x 0.080 Microstrip 1.500 x 0.080 Microstrip 0.150 x 0.240 Microstrip 0.140 x 0.240 Microstrip 0.140 x 0.240 Microstrip 0.150 x 0.240 Microstrip 0.270 x 0.080 Microstrip 0.680 x 0.080 Microstrip 0.320 x 0.080 Microstrip 0.380 x 0.080 Microstrip 31 mil Glass Teflon(R)
Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1 6 RF Device Data Freescale Semiconductor
VGG C11 GND B1 C12 C13 C14 C2 C4 C3 C18 C19 C20 B2 C17 MRF1570T1 R2 C15 C42 C16 B5 B6 C38 C6 C10 C37 C9 R1 C5 C7 R3 R4 C8 C21 C23 C22 C24 L5 C25 C26 L6 L2 L4 C28 C39 C40 C41 L1 B3 B4 C33
VDD
GND
C1
C27 C34 C35 C36 L3 C29 C31 C30 C32
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 400 - 470 MHz
100 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 0 VDD = 12.5 Vdc -5
80 400 MHz 440 MHz 40 470 MHz
60
-10 440 MHz -15 400 MHz 470 MHz -20
20 VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 7 8 Pin, INPUT POWER (WATTS)
0
10
20
30
40
50
60
70
80
Pout, OUTPUT POWER (WATTS)
Figure 13. Output Power versus Input Power
Figure 14. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS, 400 - 470 MHz
17 15 , DRAIN EFFICIENCY (%) 400 MHz G ps , POWER GAIN (dB) 13 11 9 7 VDD = 12.5 Vdc 5 0 10 20 30 40 50 60 70 80 Pout, OUTPUT POWER (WATTS) 0 0 10 20 30 40 50 60 70 80 Pout, OUTPUT POWER (WATTS) 440 MHz 470 MHz 70 60 50 40 30 20 10 400 MHz 470 MHz 440 MHz
VDD = 12.5 Vdc
Figure 15. Gain versus Output Power
Figure 16. Drain Efficiency versus Output Power
90 Pout , OUTPUT POWER (WATTS)
100
80
470 MHz 440 MHz 400 MHz
, DRAIN EFFICIENCY (%)
80 470 MHz 400 MHz 60 440 MHz 40
70
60 VDD = 12.5 Vdc Pin = 38 dBm 50 400 600 800 1000 1200 1400 1600
20
VDD = 12.5 Vdc Pin = 38 dBm 600 800 1000 1200 1400 1600
0 400
IDQ, BIASING CURRENT (mA)
IDQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Biasing Current
Figure 18. Drain Efficiency versus Biasing Current
100 Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 40 10 Pin = 38 dBm IDQ = 800 mA 11 12 13 14 15 400 MHz 470 MHz 440 MHz , DRAIN EFFICIENCY (%)
100
80 60 400 MHz 440 MHz 470 MHz 40
20 0 10
Pin = 38 dBm IDQ = 800 mA 11 12 13 14 15
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 19. Output Power versus Supply Voltage
Figure 20. Drain Efficiency versus Supply Voltage
MRF1570NT1 MRF1570FNT1 8 RF Device Data Freescale Semiconductor
B1 VGG C13 C12 C11 + C10 R1 Z2 RF INPUT C1 Z1 C2 C4 Z4 R3 Z6 Z8 C6 DUT Z10 C20 C9 C8 C33 L3 Z12
B3 B4 C32 C31 C30 + VDD C29
Z14
Z16 C24
L1
Z18 C26 RF OUTPUT C28
C22
Z20 R4 Z3 C3 B2 Z5 C5 R2 + C16 Z7 Z9 C7 L4 B5 C15 C14 C38 B6 C37 C36 C35 + VDD C34 Z11 C21 C23 Z13 Z15 Z17 C25 L2 Z19
C27
VGG C19 C18 C17
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C8, C14, C28 270 pF, 100 mil Chip Capacitors C2, C3 10 pF, 100 mil Chip Capacitors C4, C5 180 pF, 100 mil Chip Capacitors C6, C7 47 pF, 100 mil Chip Capacitors C9, C15, C33, C38 120 pF, 100 mil Chip Capacitors C10, C16, C29, C34 10 F, 50 V Electrolytic Capacitors C11, C17, C30, C35 470 pF, 100 mil Chip Capacitors C12, C18, C31, C36 1200 pF, 100 mil Chip Capacitors C13, C19, C32, C37 0.1 F, 100 mil Chip Capacitors C20, C21 22 pF, 100 mil Chip Capacitors C22, C23 20 pF, 100 mil Chip Capacitors C24, C25, C26, C27 5.1 pF, 100 mil Chip Capacitors L1, L2 1 Turn, #18 AWG, 0.115 ID Inductors L3, L4 2 Turn, #16 AWG, 0.165 ID Inductors
N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20 Board
Type N Flange Mounts 1.0 k Chip Resistors (1206) 10 Chip Resistors (1206) 0.40 x 0.080 Microstrip 0.26 x 0.080 Microstrip 1.35 x 0.080 Microstrip 0.17 x 0.240 Microstrip 0.12 x 0.240 Microstrip 0.14 x 0.240 Microstrip 0.15 x 0.240 Microstrip 0.18 x 0.172 Microstrip 1.23 x 0.080 Microstrip 0.12 x 0.080 Microstrip 0.40 x 0.080 Microstrip 31 mil Glass Teflon(R)
Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 9
VGG C10 GND B1 C33 C13 C12 C11 C8 C1 C2 R1 C9 C4 C24 C30 C31 C32 L1 C6 R3 R4 C7 C20 C22 L3 C21 C23 L4 C26 B3 B4 C29
VDD
GND
C28 C25 L2 C35 C36 C37 C38 B5 B6 C34 MRF1570T1 C27
C3 C14 C19 C18 C17 B2 C16
R2
C5 C15
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 450 - 520 MHz
100 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 0
80 470 MHz 60 450 MHz 500 MHz 520 MHz
-5
-10 470 MHz -15 500 MHz 450 MHz -20 520 MHz VDD = 12.5 Vdc -25
40
20 VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 7 8 Pin, INPUT POWER (WATTS)
0
10
20
30
40
50
60
70
80
90
Pout, OUTPUT POWER (WATTS)
Figure 23. Output Power versus Input Power
Figure 24. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS, 450 - 520 MHz
15 450 MHz 14 G ps , POWER GAIN (dB) 13 12 11 10 VDD = 12.5 Vdc 9 0 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) 20 10 20 30 40 50 60 , DRAIN EFFICIENCY (%) 470 MHz 500 MHz 520 MHz 60 500 MHz 520 MHz 70
50 470 MHz 40
450 MHz
30 VDD = 12.5 Vdc 70 80 90
Pout, OUTPUT POWER (WATTS)
Figure 25. Gain versus Output Power
Figure 26. Drain Efficiency versus Output Power
90
80
Pout , OUTPUT POWER (WATTS)
80
, DRAIN EFFICIENCY (%)
450 MHz 470 MHz
70 520 MHz 60 500 MHz 470 MHz 50 450 MHz VDD = 12.5 Vdc Pin = 38 dBm
70
500 MHz 520 MHz
60 VDD = 12.5 Vdc Pin = 38 dBm 50 400 800 1200 1600
40 400
800
1200
1600
IDQ, BIASING CURRENT (mA)
IDQ, BIASING CURRENT (mA)
Figure 27. Output Power versus Biasing Current
Figure 28. Drain Efficiency versus Biasing Current
100 Pout , OUTPUT POWER (WATTS) 90 , DRAIN EFFICIENCY (%) 80 70 60 50 40 30 10 Pin = 38 dBm IDQ = 800 mA 11 12 13 14 15 450 MHz 470 MHz 500 MHz 520 MHz
80
70 520 MHz 500 MHz 60 470 MHz 450 MHz 50 Pin = 38 dBm IDQ = 800 mA 40 10 11 12 13 14 15
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 29. Output Power versus Supply Voltage
Figure 30. Drain Efficiency versus Supply Voltage
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 11
TYPICAL CHARACTERISTICS
1011 MTTF FACTOR (HOURS X AMPS2)
1010
109
108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 31. MTTF Factor versus Junction Temperature
MRF1570NT1 MRF1570FNT1 12 RF Device Data Freescale Semiconductor
ZOL* f = 135 MHz f = 175 MHz f = 135 MHz Zin
f = 175 MHz f = 400 MHz f = 470 MHz Zin f = 400 MHz ZOL* f = 470 MHz f = 520 MHz Zo = 5 ZOL* f = 450 MHz f = 520 MHz
Zo = 5
f = 450 MHz Zin
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz 135 155 175 Zin 2.8 +j0.05 3.9 +j0.34 2.4 - j0.47 ZOL* 0.65 +j0.42 1.01 +j0.63 0.71 +j0.37
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz 400 440 470 Zin 0.92 - j0.71 1.12 - j1.11 0.82 - j0.79 ZOL* 1.05 - j1.10 0.83 - j1.45 0.59 - j1.43
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz 450 470 500 520 Zin 0.94 - j1.12 1.03 - j1.17 0.95 - j1.71 0.62 - j1.74 ZOL* 0.61 - j1.14 0.62 - j1.12 0.75 - j1.03 0.77 - j0.97
Zin
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Notes: Impedance Zin was measured with input terminated at 50 W. Impedance ZOL was measured with output terminated at 50 W.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 32. Series Equivalent Input and Output Impedance
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 13
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 800 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line.
Drain Cgd Gate Cds Cgs Source Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
MRF1570NT1 MRF1570FNT1 14 RF Device Data Freescale Semiconductor
AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See Freescale Application Note AN215A, "RF Small - Signal Design Using Two - Port Parameters" for a discussion of two port network theory and stability.
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 15
PACKAGE DIMENSIONS
MRF1570NT1 MRF1570FNT1 16 RF Device Data Freescale Semiconductor
MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 17
MRF1570NT1 MRF1570FNT1 18 RF Device Data Freescale Semiconductor
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN211A: Field Effect Transistors in Theory and Practice * AN215A: RF Small - Signal Design Using Two - Port Parameters * AN721: Impedance Matching Networks Applied to RF Power Transistors * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages * AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 9 Date June 2008 Description * Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance values in the functional test table on p. 2 * Replaced Case Outline 1366 - 04 with 1366 - 05, Issue E, p. 1, 16 - 18. Removed Drain - ID label from View Y - Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. * Replaced Case Outline 1366A - 02 with 1366A - 03, Issue D, p. 1, 19 - 21. Removed Drain - ID label from View Y - Y. Removed Surface Alignment tolerance label for cross hatched section on View Y - Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3. * Added Product Documentation and Revision History, p. 22
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MRF1570NT1 MRF1570FNT1
Document Number: RF Device Data MRF1570N Rev. 9, 6/2008 Freescale Semiconductor
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